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제품 상세 정보:
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| 타입: | 다이액 | 재료: | 실리콘 |
|---|---|---|---|
| 패키지 형태: | SMD | 패키지: | SMA(DO-214AC) |
| 힘: | 150mW | VBO: | 28-36V |
| VBO Typ: | 32V | IBO: | 100μA |
| 하이 라이트: | db3 diac 다이오드,다이액 db3 db4,db6 다이오드 SMD |
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TEST CONDITION
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SYMBOLS
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VALUE
|
UNITS
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| Min. | Typ. | Max. | ||||
|
Breakover voltage
|
C=22nF
|
VBO
|
35 | 40 | 45 |
VOLTS
|
|
Breakover voltage symmetry
|
C=22nF
|
I+VBOI-I-VBOI
|
-3
|
3 |
VOLTS
|
|
|
Dynamic breakover voltage
|
(NOTE 1)
|
I D V ± I
|
5 |
VOLTS
|
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Output voltage
|
DIAGRAM2
|
VO
|
5 |
VOLTS
|
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Breakover current
|
C=22nF
|
IBO
|
100 |
mA
|
||
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Rise time
|
DIAGRAM3 |
tr
|
1.5 |
mS
|
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Leakage current
|
VR=0.5VBO
|
IB
|
10 |
mA
|
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Power dissipation on printed circuit
|
TA=65 C
|
Pd
|
150 |
mW
|
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Repetitive peak on-state current
|
tp=20µs
f=100Hz
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ITRM
|
2 | A | ||
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Thermal Resistances from Junction to ambient
|
RQJA
|
400 |
℃/W
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|||
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Thermal Resistances from Junction to lead
|
RQJL
|
150 | ℃/W | |||
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Operating junction and storage temperature range
|
TJ,TSTG
|
-40 | 125 | ℃ | ||
| Type | Breakover Voltage | Max. Breakover Voltage Symmetry | Max. Peak Breakover Current | Max. Dynamic Breakover Voltage | Max. Peak On-state Current | Package | ||
| V | V | μA | V | A | ||||
| Min. | Typ. | Max. | ||||||
| DB3 | 28 | 32 | 36 | 3 | 100 | 5 | 2 | DO-35 |
| DB4 | 35 | 40 | 45 | 3 | 100 | 5 | 2 | DO-35 |
| DB6 | 56 | 63 | 70 | 3 | 100 | 5 | 2 | DO-35 |
| DB́8 | 72 | 80 | 88 | 3 | 100 | 5 | 2 | DO-35 |
담당자: Ms. Selena Chai
전화 번호: +86-13961191626
팩스: 86-519-85109398
